tpcc8102 TOSHIBA Semiconductor CORPORATION, tpcc8102 Datasheet - Page 3

• Manufacturer Part Number: tpcc8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
D
V
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −15 A
3
= −15 A, V
(Ta = 25°C)
≈ −24 V, V
= ±20 V, V
= −30 V, V
= −10 V, I
= −4 V, I
= −10 V, I
= −10 V, I
= −10 V, V
0 V
-10
Test Condition
Test Condition
w
D
= 10 μs
D
D
D
GS
GS
GS
GS
GS
= −7.5 A
GS
DS
= −1.0 mA
= −7.5 A
= −7.5 A
⎯
= 0 V
= 0 V
= −20 V
I
V
= −10 V,
= 0 V
= 0 V
= 0 V, f = 1 MHz
D
DD
= −7.5 A
≈ −15 V
V
OUT
−0.8
Min
−30
−13
Min
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1200
Typ.
25.5
14.5
Typ.
250
370
109
9.1
3.4
8.0
25
16
42
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCC8102
2009-08-06
±100
−2.0
33.2
18.9
Max
Max
−10
−45
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
V
V
S
A
V