tpc6701 TOSHIBA Semiconductor CORPORATION, tpc6701 Datasheet - Page 4

• Manufacturer Part Number: tpc6701
• Description: Toshiba Multi-chip Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
0.1
10
1
0.1
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
*: Single nonrepetitive pulse
I C max (continuous)
I C max (pulsed)*
Ta = 25°C
10 s*
2
Collector-emitter voltage V
DC operation
).
(Ta = 25°C)
1000
100
Safe Operating Area
10
0.001
1
1
100 ms*
10 ms*
1 ms*
0.01
10
CE
100 μs*
Transient Thermal Resistance r
(V)
10 μs*
0.1
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
mm
100
2
)
Pulse width t
1
4
w
(s)
0.5
0.4
0.3
0.2
0.1
0
0
10
DC operation
Ta = 25°C
Mounted on an FR4 board (glass epoxy,
1.6 mm thick, Cu area: 645 mm
th
Permissible power dissipation for Q1 P C (W)
– t
w
Permissible Power Dissipation for
0.1
Simultaneous Operation
100
0.2
2
)
0.3
1000
0.4
2006-11-10
TPC6701
0.5