tpc6701 TOSHIBA Semiconductor CORPORATION, tpc6701 Datasheet

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tpc6701

Manufacturer Part Number
tpc6701
Description
Toshiba Multi-chip Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Quantity
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Part Number:
TPC6701
Manufacturer:
toshiba
Quantity:
30 000
High-Speed Switching Applications
Motor Drive Applications
Inverter Lighting Applications
Absolute Maximum Ratings
Two NPN transistors are mounted on a compact and slim package.
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(single-device operation)
Total collector power dissipation
(simultaneous operation)
Thermal resistance, junction to
ambient (single-device operation)
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Total collector power dissipation value when two devices are operated at the same time
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type
f
Pulse
FE
= 85 ns (typ.)
DC
= 400 to 1000 (I
(Ta = 25°C)
Symbol
R
V
V
V
V
P
th (j-a)
T
I
P
CBO
CEO
EBO
CEX
I
CP
I
(Note 1)
(Note 2)
(Note 1)
T
CT
stg
C
B
C
TPC6701
j
CE (sat)
C
= 0.1 A)
−55 to 150
= 0.17 V (max)
Rating
100
400
660
312
150
1.0
2.0
0.1
80
50
7
1
°C/W
Unit
mW
mW
mA
°C
°C
V
V
V
V
A
Weight: 0.011 g (typ.)
JEDEC
JEITA
TOSHIBA
2
2
)
)
2-3T1D
2006-11-10
TPC6701
Unit: mm

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tpc6701 Summary of contents

Page 1

... CBO CEX CEO EBO 400 mW (Note 660 mW (Note (j-a) 312 °C/W (Note 1) T 150 °C j −55 to 150 T °C stg 1 TPC6701 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1D Weight: 0.011 g (typ 2006-11-10 ...

Page 2

... μ Input Duty cycle < 1% Marking Part No. (or abbreviation code) Pin #1 2 TPC6701 Min Typ. Max ⎯ ⎯ ⎯ ⎯ ⎯ 50 ⎯ 400 1000 ⎯ 200 ⎯ ⎯ 0.17 ⎯ ⎯ 1.10 ⎯ 5 ⎯ ...

Page 3

... 100 1.0 1.2 0.001 (V) 10 Common emitter Single nonrepetitive pulse 0.3 0.1 0.03 1 0.001 1.0 1.2 3 TPC6701 h – 100°C 25 −55 Common emitter Single nonrepetitive pulse 0.01 0.1 1 Collector current I ( – (sat) C − 100°C 0.01 0.1 ...

Page 4

... Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 0 Pulse width t (s) w Permissible Power Dissipation for 0.5 0.4 10 μs* 0.3 0.2 DC operation 0 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 Permissible power dissipation for (W) 100 (V) 4 TPC6701 100 1000 Simultaneous Operation 2 ) 0.1 0.2 0.3 0.4 0.5 2006-11-10 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPC6701 20070701-EN 2006-11-10 ...

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