tpc6601 TOSHIBA Semiconductor CORPORATION, tpc6601 Datasheet - Page 3

• Manufacturer Part Number: tpc6601
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.001
−0.01
−3.0
−2.4
−1.8
−1.2
−0.6
−0.1
−3.0
−2.4
−1.8
−1.2
−0.6
−0.001
−1
0
0
0
0
Common emitter
I C /I B = 30
Single nonrepetitive
pulse
Common emitter
V CE = −2 V
Single nonrepetitive
pulse
−100
−0.4
−0.2
Collector-emitter voltage V
Base-emitter voltage V
−0.01
−80
Collector current I
Ta = 100°C
−0.8
−0.4
V
Ta = 100°C
CE (sat)
I
−60
I
C
C
– V
– V
−1.2
−0.1
−0.6
0
25
CE
BE
−55
– I
C
Common emitter
Ta = 25°C
Single nonrepetitive
C
−1.6
−0.8
BE
25
CE
(A)
−1
(V)
−40
I B = −2 mA
(V)
−2.0
−1.0
−55
−30
−20
−10
−6
−4
−2.4
−1.2
−10
3
10000
1000
−0.1
100
−10
−0.001
−0.001
10
−1
Common emitter
I C /I B = 30
Single nonrepetitive
pulse
Common emitter
V CE = −2 V
Single nonrepetitive
pulse
−0.01
−0.01
25
Collector current I
Collector current I
Ta = 100°C
25
Ta = 100°C
V
−55
−55
BE (sat)
h
FE
−0.1
−0.1
– I
– I
C
C
C
C
(A)
(A)
−1
−1
2006-11-10
TPC6601
−10
−10