tpc6601 TOSHIBA Semiconductor CORPORATION, tpc6601 Datasheet - Page 2

• Manufacturer Part Number: tpc6601
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Circuit Configuration
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Characteristics
6
1
Figure 1 Switching Time Test Circuit & Timing Chart
5
2
Storage time
Rise time
Fall time
4
3
(Ta = 25°C)
I
B1
Duty cycle < 1%
V
V
20 μs
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
EBO
t
stg
t
t
r
f
(1)
(2)
(or abbreviation code)
I
B2
Marking
V
V
I
V
V
I
I
See Figure 1 circuit diagram.
V
I
C
C
C
B1
CB
EB
CE
CE
CC
Input
= −10 mA, I
= −1.0 A, I
= −1.0 A, I
2
= −I
= −7 V, I
= −50 V, I
= −2 V, I
= −2 V, I
∼ − −30 V, R
B2
I
I
B1
B2
Part No.
Test Condition
= −33 mA
B
B
C
C
C
Pin #1
B
E
= −33 mA
= −33 mA
= 0
= −0.3 A
= −1.0 A
L
= 0
= 0
Lot code (month)
V
= 30 Ω
CC
Output
H3A
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
Min
−50
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Product-specific code
Typ.
250
60
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-10
TPC6601
−100
−100
−0.2
−1.1
Max
500
⎯
⎯
⎯
⎯
⎯
Unit
nA
nA
ns
V
V
V