php1n60 NXP Semiconductors, php1n60 Datasheet
php1n60
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php1n60 Summary of contents
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... ˚ ˚ > 25 ˚ starting T = 25˚ starting T = 25˚ CONDITIONS 1 Product specification PHP1N60 MAX. UNIT 600 1 SYMBOL MIN. MAX. UNIT - 1.9 - 1 0.4 W ...
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... Measured from source lead 6 mm from package to source bond pad MHz GS DS CONDITIONS T = 25˚ 25˚ 1 1 dI/dt = 100 Product specification PHP1N60 MIN. TYP. MAX. UNIT 600 - - V - 0.7 - V/K - 4.6 6.0 2.0 3.0 4.0 V 0.5 1 100 ...
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... Fig.4. Transient thermal impedance f(t); parameter j-mb p PHP1N60A 10 V VGS = 4 VDS, Drain-Source voltage (Volts) Fig.5. Typical output characteristics . I = f(V ); parameter PHP1N60A VGS = Drain current, ID (Amps) Fig.6. Typical on-state resistance . R = f(I ); parameter V DS(ON 1E+ 6 ...
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... SUB-THRESHOLD CONDUCTION 2 % typ VGS / V Fig.11. Sub-threshold drain current. = f(V ; conditions ˚ PHP1N60A Capacitances, Ciss, Coss, Crss (pF) Ciss Coss Crss 10 100 Drain-source voltage, VDS ( iss oss ); conditions MHz ...
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... Fig.17. Normalised unclamped inductive energy VGS 0 100 150 Fig.18. Unclamped inductive test circuit Product specification PHP1N60 PHP1N60A 150 0.5 1 Source-Drain voltage, VSDS ( f(V ); parameter T F SDS j EAS, Normalised unclamped inductive energy (%) 100 120 Starting ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". June 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.19. TO220AB; pin 2 connected to mounting base. 6 Product specification PHP1N60 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1997 7 Product specification PHP1N60 Rev 1.000 ...