buk7514-30 NXP Semiconductors, buk7514-30 Datasheet - Page 2

• Manufacturer Part Number: buk7514-30
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
TrenchMOS
Standard level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
Q
Q
Q
C
C
C
t
t
t
t
L
L
L
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
V
fs
d
d
s
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
g(tot)
gs
gd
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
transistor
CONDITIONS
V
V
V
V
I
V
CONDITIONS
V
I
V
V
V
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
G
D
GS
DS
DS
GS
GS
DS
GS
DD
GS
= 69 A; V
= 1 mA;
= V
= 30 V; V
= 25 V; I
= 0 V; I
= 10 V; V
= 10 V; I
= 0 V; V
= 25 V; I
= 10 V; R
GS
; I
2
D
D
DD
DS
D
D
D
= 0.25 mA;
= 1 mA
GS
G
= 24 V; V
= 25 A
= 25 A
= 25 A;
DS
= 25 V; f = 1 MHz
= 5
= 0 V;
= 0 V
GS
T
T
T
T
T
T
j
j
j
j
= 10 V
j
j
= 175˚C
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
2.0
1.0
30
27
16
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
1500
0.05
0.02
480
220
3.0
3.5
4.5
7.5
12
18
38
21
22
30
40
25
7
-
-
-
-
-
-
-
-
Product specification
PHP69N03T
MAX.
MAX.
2000
500
550
300
4.0
4.4
10
20
14
26
35
60
50
38
1
-
-
-
-
-
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
m
m
nC
nC
nC
nH
nH
nH
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
S
A
A
A
A