buk7528 NXP Semiconductors, buk7528 Datasheet - Page 3

• Manufacturer Part Number: buk7528
• Description: Buk7528-100a; Buk7628-100a Trenchmos Tm Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
AVALANCHE LIMITING VALUE
1 For maximum permissible repetive avalanche current see fig.18.
March 2000
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
= 30 A; V
5 V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
ID/A
0.001
0.01
Zth/(K/W)
1000
0.1
I
100
D
1E-07
1
10
1
& I
Fig.3. Safe operating area. T
1
0.05
0.02
0.2
RDS(ON)=VDS/ID
0.1
Fig.4. Transient thermal impedance.
0.5
DM
0
mb
Z
= f(V
= 25 ˚C
th j-mb
1E-05
DS
= f(t); parameter D = t
); I
10
DM
DC
t/s
MIN.
single pulse; parameter t
-
1E-03
VSD/V
TYP.
BUK7528-100A
BUK7628-100A
-
Product specification
100
1E-01
mb
100ms
100us
10ms
10us
1us
tp =
1ms
MAX.
= 25 ˚C
p
/T
45
Rev 1.000
1E+01
UNIT
1000
mJ
p