buk9e2r4-40c NXP Semiconductors, buk9e2r4-40c Datasheet
buk9e2r4-40c
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buk9e2r4-40c Summary of contents
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... BUK9E2R4-40C N-channel TrenchMOS logic level FET Rev. 01 — 11 April 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... sup °C; unclamped j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET Graphic symbol mbb076 2 3 Min Max - -15 15 [1] - 270 ...
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... (1) ( Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aac266 10 t (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...
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... Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9E2R4-40C_1 Product data sheet Limit DSon DS D (1) 1 Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET 003aac271 = 10 μ 100 μ 100 ...
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... 175 °C; see T Figure 175 ° ° Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET Min Typ Max - 0.45 003aab020 t p δ −2 −1 10 ...
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... MHz see Figure 15 = 1.2 Ω Ω G(ext) from drain lead 6 mm from package to centre of die from source lead to source bond pad Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET Min Typ Max - 2 100 - 2 100 - - 2.7 - 1.8 2 ...
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... V ( Fig 9. Gate-source threshold voltage as a function of junction temperature Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET 003aac253 = 175 ° ° ( 25V 03aa33 max typ min 0 60 120 ( ° A;V ...
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... I ( Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET 03aa27 0 60 120 ( ° DSon R DSon ( 25°C ) 003aac257 ( °C; I ...
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... I S (A) 200 150 = 175 ° 100 25 ° 0.5 1 1.5 Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET 003aac255 C iss C oss C rss ( 003aac261 2 V (V) SD © NXP B.V. 2008. All rights reserved. ...
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... max 0.7 1.6 10.3 15.0 11 2.54 0.4 1.2 9.7 13.5 REFERENCES JEDEC JEITA low-profile 3-lead TO-220AB Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET base 3.30 2.6 2.79 2.2 EUROPEAN ISSUE DATE PROJECTION 05-06-23 06-02-14 © NXP B.V. 2008. All rights reserved. SOT226 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9E2R4-40C_1 20080411 BUK9E2R4-40C_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 11 April 2008 BUK9E2R4-40C Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 11 April 2008 BUK9E2R4-40C N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9E2R4-40C_1 All rights reserved. Date of release: 11 April 2008 ...