buk9560-100a NXP Semiconductors, buk9560-100a Datasheet - Page 6

• Manufacturer Part Number: buk9560-100a
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 07771
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
Characteristics
R DSon
I D
80
60
40
20
(A)
0
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
140
120
100
(m )
80
60
40
20
0
0
0
p
= 300 s
V GS (V) =
2
20
3
…continued
4
V GS (V) =
3.2
40
6
3.4 3.6 3.8 4 5
6
8
60
8
V DS (V)
Conditions
I
Figure 15
I
V
I D (A)
03nc73
S
S
GS
03nc74
= 25 A; V
= 20 A; dI
10
10
= 10 V; V
5
4
3
2.2
80
Rev. 01 — 22 January 2001
BUK9560-100A; BUK9660-100A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
R DSon
--------------------------- -
R
100
(m )
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
90
80
70
60
50
40
R
3
2
1
0
-60
DSon
2
D
Min
= 15 A
-20
4
20
TrenchMOS™ logic level FET
Typ
0.85
61
200
60
6
© Philips Electronics N.V. 2001. All rights reserved.
100
8
Max
1.2
V GS (V)
140
T
j
(
o
03nc72
03aa29
C)
180
10
Unit
V
ns
nC
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