tpca8107-h TOSHIBA Semiconductor CORPORATION, tpca8107-h Datasheet - Page 4

• Manufacturer Part Number: tpca8107-h
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
−30
−25
−20
−15
−10
−10
0.1
10
−5
−8
−6
−4
−2
1
0
−0.1
0
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−4.5
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−0.2
−1
Ta = −55°C
Drain current I
−1
100
25
−4
−0.4
−2
⎪Y
I
I
D
D
25
fs
– V
– V
−3.4
⎪ – I
−3.2
Ta = −55°C
−3
DS
GS
−0.6
D
−3
D
−10
Common source
GS
DS
100
(A)
Pulse test
V GS = −2.4 V
Ta = 25°C
−0.8
−4
(V)
(V)
−2.8
−2.7
−2.6
−2.5
−100
−1.0
−5
4
−0.5
−0.4
−0.3
−0.2
−0.1
300
100
−20
−16
−12
30
10
−8
−4
0
3
−0.1
0
0
0
−4.5
Common source
Ta = 25°C
Pulse test
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−2
−0.4
Drain current I
−4
−1
R
−0.8
V
DS (ON)
−4
I
DS
D
– V
−6
– V
V GS = −10 V
−3.4
−4.5 V
DS
GS
−1.2
– I
D
−3.2
D
I D = −7.5 A
−10
−8
Common source
GS
DS
(A)
Common source
Ta = 25℃
Pulse test
Pulse test
Ta = 25°C
V GS = −2.4 V
TPCA8107-H
−1.6
−3.8
(V)
(V)
−10
−1.9
2006-01-17
−2.8
−2.6
−3
−100
−2.0
−12