tpca8107-h TOSHIBA Semiconductor CORPORATION, tpca8107-h Datasheet

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tpca8107-h

Manufacturer Part Number
tpca8107-h
Description
Toshiba Field Effect Transistor Silicon P-channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Maximum Ratings
Small footprint due to a small and thin package
High speed switching
Small gate charge: Q
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc=25℃)
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)
Characteristic
(Note 2a) (Note 4)
GS
DC
Pulsed (Note 1)
SW
= 20 kΩ)
(Ta = 25°C)
DSS
th
= 9.7 nC (typ.)
(Note 2a)
(Note 2b)
= −0.8 to−2.0 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= −10 μA (max) (V
TPCA8107-H
DS (ON)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
P
DSS
I
DP
AR
| =14 S (typ.)
AS
AR
stg
D
ch
D
D
D
DS
= 24mΩ (typ.)
DS
=−10 V, I
= −40 V)
−55 to 150
Rating
−7.5
−7.5
−40
−40
±20
−30
150
2.8
1.6
1.9
30
26
1
D
=−1 mA)
Unit
mJ
mJ
°C
°C
W
W
W
V
V
V
A
A
Weight: 0.066 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
0.95±0.05
S
1,2,3:SOURCE
5,6,7,8:DRAIN
0.5±0.1
8
1
8
1
8
1
1.27
4.25±0.2
0.05 S
5.0±0.2
7
2
TPCA8107-H
0.4±0.1
2-5Q1A
4
5
6
3
2006-01-17
5
4
0.8±0.1
1.1±0.2
0.05 M A
4:GATE
0.15±0.05
0.595
0.166±0.05
5
4
Unit: mm
A

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tpca8107-h Summary of contents

Page 1

... 2 1 −7 1 150 °C ch −55 to 150 T °C stg 1 TPCA8107-H Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN ⎯ JEDEC ⎯ ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 4.17 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8107-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = −7.5 A 2006-01-17 ...

Page 3

... − 7. (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −7 DSF TPCA8107-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ − −40 ⎯ ⎯ −20 ⎯ ⎯ −0.8 ⎯ ...

Page 4

... Gate-source voltage V 300 Common source Ta = 25°C Pulse test 100 −100 −0.1 Drain current I 4 TPCA8107-H I – Common source − 25°C Pulse test −3.4 −3.2 −3 −2.8 −2 −2.4 V −0.8 −1.2 −1.6 −2.0 ...

Page 5

... C iss −1.2 C oss −0.8 Common source C rss −10 V −0 −1 mA Pulse test 0 −80 −100 (V) −20 −16 −12 −8 − TPCA8107-H I – −10 −4.5 −3 − 0.2 0.4 0.6 0.8 1.0 1.2 ( – − 120 ...

Page 6

... V DSS max temperature −0.1 −0.1 −1 −10 Drain-source voltage – 0 Pulse width t ( 160 0 C) ° −100 (V) 6 TPCA8107-H (2) (1) (3) Single - pulse 100 1000 P – 120 160 Case temperature ° C 2006-01-17 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8107-H 20070701-EN 2006-01-17 ...

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