tpca8104 TOSHIBA Semiconductor CORPORATION, tpca8104 Datasheet - Page 3

• Manufacturer Part Number: tpca8104
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
GS
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −40 A
3
−10 V
= −40 A, V
(Ta = 25°C)
= −60 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
≈ −48 V, V
0 V
Test Condition
Test Condition
w
D
= 10 μs
D
D
D
GS
GS
GS
GS
= −20 A
GS
GS
DS
= −1 mA
= −20 A
= −20 A
⎯
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V
I
D
V
DD
= −20A
∼ − −30 V
Output
−0.8
Min
−60
−35
Min
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4300
Typ.
Typ.
450
600
200
⎯
⎯
⎯
⎯
⎯
17
11
50
10
20
60
90
16
28
⎯
⎯
TPCA8104
2006-11-17
−120
Max
−2.0
Max
±10
−10
1.2
24
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V