tpca8104 TOSHIBA Semiconductor CORPORATION, tpca8104 Datasheet

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tpca8104

Manufacturer Part Number
tpca8104
Description
Toshiba Field Effect Transistor Silicon P-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High-Side Switching Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON-resistance: R
High forward transfer admittance:|Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, see the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
DC
Pulse
(Tc = 25°C) (Note 4)
GS
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
(Note 3)
= -0.8 to -2.0 V (V
(Note 1)
(Note 1)
= -10 μA (V
DS (ON)
(Ta = 25°C)
Symbol
fs
TPCA8104
V
V
V
DS
E
E
T
I
I
T
| = 50 S (typ.)
DGR
GSS
P
P
P
DSS
I
DP
AR
AS
AR
stg
D
ch
D
D
D
= -60 V)
DS
= 11 mΩ (typ.)
= -10 V, I
−55~150
Rating
-120
±20
116
150
-60
-60
-40
-40
2.8
1.6
4.5
45
1
D
= -1 mA)
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
1, 2, 3: Source
5, 6, 7, 8: Drain
0.95±0.05
S
0.5±0.1
8
1
8
1
8
1
1.27
4.25±0.2
0.05 S
5.0±0.2
7
2
0.4±0.1
2-5Q1A
TPCA8104
4
6
3
2006-11-17
5
4
5
4: Gate
0.8±0.1
1.1±0.2
0.05 M A
0.15±0.05
0.595
0.166±0.05
5
4
Unit: mm
A

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tpca8104 Summary of contents

Page 1

... 116 - 4 150 °C ch −55~150 T °C stg 1 TPCA8104 Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0.05 4 0.595 1 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0 Source 4: Gate Drain JEDEC ― ...

Page 2

... Year of manufacture (the last digit of the calendar year) Symbol Max R 2.78 th (ch-c) R 44.6 th (ch-a) R 78.1 th (ch-b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8104 Unit °C/W °C/W FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = -40 A 2006-11-17 ...

Page 3

... −40 A gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPCA8104 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ − −60 ⎯ ⎯ −35 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... Gate−source voltage V 100 Common source Tc = 25°C Pulse test 10 1 −1 −100 4 TPCA8104 I – −5 −4 Common source Tc = 25°C Pulse test −3.8 −3.6 −3.4 −3.2 −3 −2 −2.6 V −3 −4 − ...

Page 5

... −1mA Pulse test 0 −100 −80 −40 (V) −60 − −48 V −40 −30 −24 −20 −12 −10 0 160 0 20 Total gate charge Q 5 TPCA8104 I – −5 − −1 Common source Tc = 25°C Pulse test 0.8 0.4 0.6 1.0 1.2 ( – ...

Page 6

... V DSS max temperature. −0.1 −0.1 −1 −10 Drain−source voltage – 0 Pulse width t ( −100 (V) 6 TPCA8104 (3) (2) (1) Single pulse 100 1000 P – 120 160 Case temperature Tc(°C) 2006-11-17 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8104 20070701-EN 2006-11-17 ...

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