tpca8015-h TOSHIBA Semiconductor CORPORATION, tpca8015-h Datasheet - Page 6

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tpca8015-h

Manufacturer Part Number
tpca8015-h
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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1000
100
2.5
1.5
0.5
0.1
10
1
3
2
1
0
0.1
0
Curves must be derated linearly
with increase in temperature.
I D max (Pulsed) *
I D max (Continuous)
* Single - pulse
Ta = 25°C
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
40
1000
100
0.1
10
0.001
Safe operating area
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
DC Operation
Tc = 25°C
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10s
P
D
80
– Ta
0.01
V DSS max
10
DS
t =1ms *
120
(V)
°
C)
10ms *
0.1
160
100
Pulse width t
r
6
th
– t
1
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature Tc (
40
100
Single - pulse
P
(3)
D
(2)
(1)
80
– Tc
1000
TPCA8015-H
120
°
C)
2006-01-17
160

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