tpca8015-h TOSHIBA Semiconductor CORPORATION, tpca8015-h Datasheet - Page 2
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tpca8015-h
Manufacturer Part Number
tpca8015-h
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8015-H.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCA8015-H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
(Note 5)
* Weekly code: (Three digits)
TPCA
8015-H
DD
= 24 V, T
Characteristic
※
(a)
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.1 mH, R
Type
Lot No.
25.4 × 25.4 × 0.8
(Tc=25℃)
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
2.78
44.6
78.1
Max
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
°C/W
Unit
= 35 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8015-H
2006-01-17