ipb023n06n3g Infineon Technologies Corporation, ipb023n06n3g Datasheet - Page 4

• Manufacturer Part Number: ipb023n06n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
250
200
150
100
10
10
10
10
50
0
DS
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
[V]
DC
10
10 ms
1
1 ms
150
100 µs
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
160
120
=f(t
0.1
80
40
C
1
0
10
); V
p
0
0.02
)
0.01
-5
0.05
0.2
0.5
0.1
GS
single pulse
≥10 V
10
p
/T
-4
50
10
-3
T
t
C
p
100
[°C]
[s]
10
-2
IPB023N06N3 G
150
10
-1
2008-12-11
10
200
0