ipb023n06n3g Infineon Technologies Corporation, ipb023n06n3g Datasheet
![no-image](/images/no-image-200.jpg)
ipb023n06n3g
Available stocks
Related parts for ipb023n06n3g
ipb023n06n3g Summary of contents
Page 1
Type (TM) OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • N-channel, normal level • 100% ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
Page 4
Power dissipation P =f(T ) tot C 250 200 150 100 Safe operating area I =f =25 ° parameter limited by on-state ...
Page 5
Typ. output characteristics I =f =25 ° parameter 400 6 320 6 V 240 5.5 V 160 4 ...
Page 6
Drain-source on-state resistance R =f =100 A; V DS(on max -60 - Typ. capacitances C =f MHz DS GS ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
PG-TO263-7 (D²-Pak 7pin) 2) Current is limited by bondwire; with See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 =0.7 K/W the chip is able to carry 226 A. ...
Page 9
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...