ipb06n03lbg Infineon Technologies Corporation, ipb06n03lbg Datasheet - Page 4

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ipb06n03lbg

Manufacturer Part Number
ipb06n03lbg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 0.93
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
100
90
80
70
60
50
40
30
20
10
10
DS
1
0
0.1
C
0
); T
)
C
p
limited by on-state
resistance
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
10
10 ms
1 ms
10 µs
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
=f(t
0.1
10
60
40
20
C
1
0
); V
p
0
0
10
)
0.5
0.2
0.05
0.02
0.01
0.1
-6
GS
≥10 V
10
0
p
/T
-5
single pulse
50
10
0
-4
T
10
t
C
100
p
-3
0
[°C]
[s]
10
-2
0
IPB06N03LB
150
10
-1
0
10
0
2006-05-10
200
1

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