tpc8a06-h TOSHIBA Semiconductor CORPORATION, tpc8a06-h Datasheet - Page 7

• Manufacturer Part Number: tpc8a06-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
160
140
120
100
10
80
60
40
20
1
0
0
0
V GS = 0 V
Pulse test
Drain-source voltage V
Drain-source voltage V
0.2
10
I
0.4
DR
Tch – V
– V
20
DSF
DS
125
0.6
DSF
DS
Ta = 25°C
30
0.8
V GS = 0 V
Pulse test
(V)
(V)
75
40
1
7
100000
10000
1000
100
10
0
V GS = 0 V
Pulse test
Channel temperature Tch (°C)
40
I
DSS
– Tch (typ.)
V DS = 30 V
80
20
120
TPC8A06-H
10
2009-06-05
5
160