tpc8a06-h TOSHIBA Semiconductor CORPORATION, tpc8a06-h Datasheet - Page 4

• Manufacturer Part Number: tpc8a06-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
10
15
10
10
5
0
8
6
4
2
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
8
6
5
4
4.5
Drain-source voltage V
Gate-source voltage V
0.2
1
Ta = −55°C
Drain current I
1
0.4
100
2
⎪Y
I
I
D
D
2.8
100
fs
– V
– V
⎪ − I
DS
GS
0.6
D
Ta = −55°C
3
D
25
25
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.2 V
0.8
4
(V)
(V)
2.7
2.4
2.5
100
5
1
4
100
10
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
0
1
0.1
8
0
0
6
Common source
Ta = 25°C
Pulse test
5
4
4.5
Drain-source voltage V
Gate-source voltage V
2
1
Drain current I
3
1
R
2.9
V
DS (ON)
2
4
I
DS
D
V GS = 10 V
– V
4.5 V
– V
6
DS
GS
− I
6
3
D
D
10
I D = 12 A
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.2 V
4
TPC8A06-H
8
(V)
(V)
2009-06-05
2.8
2.5
2.4
2.7
100
10
5