tpcp8005-h TOSHIBA Semiconductor CORPORATION, tpcp8005-h Datasheet - Page 5

• Manufacturer Part Number: tpcp8005-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
0.4
1.2
0.8
25
20
15
10
10
−80
5
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(2)
(1)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
V GS = 10 V
40
Capacitance – V
0
1
R
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
DS (ON)
board(a) (Note 2a)
board(b) (Note 2b)
P
t = 10s
D
40
80
– Ta
– Ta
I D = 11A
80
10
DS
I D = 2.8A,5.5A,11A
DS
120
C rss
°
°
C oss
C iss
(V)
C)
C)
120
2.8A,5.5A
160
100
160
5
100
2.5
1.5
0.5
20
10
50
40
30
10
−80
1
3
2
1
0
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
I D = 11 A
Ta = 25°C
Pulse test
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
5
Total gate charge Q
Common source
Ta = 25°C
Pulse test
10
Dynamic input/output
10
0
4.5
characteristics
−0.4
I
DR
V
3
th
V DD = 6 V
– V
40
15
– Ta
DS
−0.6
24 V
1
20
80
g
DS
(nC)
TPCP8005-H
12 V
V GS = 0 V
−0.8
°
(V)
120
C)
25
2007-12-25
160
−1
30
20
16
12
8
4
0