tpcp8005-h TOSHIBA Semiconductor CORPORATION, tpcp8005-h Datasheet - Page 4

• Manufacturer Part Number: tpcp8005-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
20
16
12
10
10
5
4
3
2
1
0
8
4
0
1
0.1
0
0
8
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
6 5
4.5
Drain-source voltage V
Gate-source voltage V
4
0.2
1
Ta = −55°C
Drain current I
1
3.3
0.4
⎪Y
2
I
I
D
D
fs
– V
– V
⎪ – I
100
100
DS
GS
D
0.6
3
D
25
10
GS
DS
(A)
Ta = −55°C
Common source
Ta = 25°C
Pulse test
V GS = 2.9V
25
0.8
4
(V)
(V)
3.2
3.1
100
1
5
4
0.15
0.05
100
0.2
0.1
10
10
10
8
6
4
2
0
0
1
0.1
0
0
8
6
5
4
4.5
Drain-source voltage V
Gate-source voltage V
0.4
3.5
2
Drain current I
V GS = 10 V
1
R
4.5
0.8
V
DS (ON)
4
I
DS
D
– V
– V
DS
GS
– I
1.2
6
D
3.4
D
10
GS
DS
Common source
Ta = 25 ℃
Pulse test
(A)
Common source
Ta = 25°C
Pulse test
V GS = 3.0V
Common source
Ta = 25℃
Pulse test
2.8
I D = 11 A
5.5
TPCP8005-H
1.6
(V)
(V)
8
3.2
3.3
2007-12-25
100
10
2