tpcp8006 TOSHIBA Semiconductor CORPORATION, tpcp8006 Datasheet - Page 4

• Manufacturer Part Number: tpcp8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
4
Pulse test
Common source
Common source
V DS = 10 V
Pulse test
V DS = 10 V
3
Drain−source voltage V
0.5
Gate−source voltage V
0.2
2
Drain current I
Ta = −55°C
1.9
1
1
0.4
I
I
|Y
100
D
D
fs
– V
– V
1.5
| – I
DS
GS
25°C
D
0.6
D
Ta = −55°C
1.8
25
100°C
10
2
GS
(A)
DS
Common source
Pulse test
V GS = 1.4 V
Ta = 25°C
0.8
(V)
(V)
2.5
1.7
1.6
1.5
100
1
3
4
100
0.8
0.6
0.4
0.2
20
16
12
10
8
4
0
1
1
0
0.1
0
0
4
Common source
Ta = 25°C
Pulse test
2.3
3
Drain−source voltage V
Gate−source voltage V
0.4
2
Drain current I
4.5
V GS = 2.5 V
2
1
R
0.8
V
DS (ON)
4
I
DS
D
I D = 9.1 A
4.5
– V
– V
DS
GS
– I
1.2
6
D
D
10
GS
(A)
DS
Common source
Common source
Pulse test
Pulse test
Ta = 25°C
Ta = 25°C
V GS = 1.4 V
1.6
8
(V)
(V)
TPCP8006
2008-10-22
1.9
1.6
1.8
1.7
1.5
100
10
2