tpcp8006 TOSHIBA Semiconductor CORPORATION, tpcp8006 Datasheet - Page 3

• Manufacturer Part Number: tpcp8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
3
= 9.1 A, V
(Ta = 25°C)
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±12 V, V
= 2.5 V, I
= 4.5 V, I
≈ 16 V, V
5 V
0 V
Test Condition
Test Condition
w
D
D
GS
GS
D
D
GS
GS
GS
GS
= 10 μs
= 1 mA
= 4.5 A
DS
= 4.5 A
= 4.5 A
⎯
= 0 V
= −12 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 5 V, I
= 0 V
I
D
V
DD
= 4.5 A
≈ 10 V
D
= 9.1 A
V
OUT
Min
Min
0.5
20
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
1480
Typ.
Typ.
330
470
9.5
6.5
⎯
⎯
⎯
⎯
⎯
36
16
19
53
22
⎯
⎯
8
4
7
TPCP8006
2008-10-22
±100
Max
13.7
Max
36.4
−1.2
1.2
10
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V