hcts299ms Intersil Corporation, hcts299ms Datasheet - Page 4

• Manufacturer Part Number: hcts299ms
• Description: Rad-hard 8-bit Universal Shift Register; Three-state
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . ±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . . 500ns Max
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Quiescent Current
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
PARAMETER
SYMBOL
VOH
VOL
ICC
IOH
IOL
IOZ
IIN
FN
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
) . . . . . . . . . . . . -55
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Applied Voltage = 0V or
VCC, VCC = 5.5V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
CONDITIONS
Specifications HCTS299MS
(NOTE 1)
o
o
C to +150
C to +125
o
o
o
o
C
C
C
C
627
GROUPS
7, 8A, 8B
GROUP
A SUB-
Reliability Information
Thermal Resistance
Maximum Package Power Dissipation at +125
If device power exceeds package dissipation capability, provide
heat sinking or derate linearly at the following rate:
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
1
1
1
1
1
+25
+25
+25
+25
+25
TEMPERATURE
+125
+125
+125
o
o
o
o
+125
+125
o
C, +125
C, +125
C, +125
C, +125
C, +125
+25
+25
+25
+25
+25
o
o
o
o
o
C, -55
C, -55
C, -55
C, -55
C, -55
o
o
o
o
o
o
o
o
o
o
C
C
C
C
C
C, -55
C, -55
C, -55
C, -55
C, -55
o
o
o
o
o
C
C
C
C
C
o
o
o
o
o
C
C
C
C
C
VCC
VCC
MIN
-7.2
-6.0
-0.1
-0.1
7.2
6.0
-
-
-
-
-
-
-
-
-
Spec Number
LIMITS
o
107
72
C Ambient
θ
o
o
MAX
JA
C/W
±0.5
±5.0
750
±50
0.1
0.1
C/W
40
±1
-
-
-
-
-
-
-
24
28
UNITS
518640
θ
mA
mA
mA
mA
o
o
µA
µA
µA
µA
µA
µA
V
V
V
V
JC
C/W
C/W
-
o
o
C
C