k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 6

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
DQB8..DQB0
9
Internal DQB Data Path
9
9
ROWR
11
ROP
AV
9
Packet Decode
ROW2..ROW0
RQ7..RQ5 or
Match
DM
1:8 Demux
5
9
DR
3
5
Row Decode
9
72
BR
Sense Amp
Figure 2: 288Mbit (512Kx18x32s) RDRAM Device Block Diagram
ROWA
9
Mux
64x72
R
72
PRER
ACT
RCLK
64x72
DRAM Core
CTM CTMN
TCLK
512x128x144
REFR
SCK,CMD
Control Registers
2
Power Modes
Page 4
Bank 13
Bank 14
Bank 15
Bank 16
Bank 17
Bank 18
Bank 29
Bank 30
Bank 31
Bank 0
Bank 1
Bank 2
SIO0,SIO1
2
DEVID
CFM CFMN
RCLK
XOP
6
M
64x72
XOP Decode
COLX
Match
5
DX
PREX
5
BX
Version 1.4 Dec. 2003
Packet Decode
5
COP
72
S
Direct RDRAM
RQ4..RQ0 or
COL4..COL0
Match
1:8 Demux
5
DC
COLC
72
Internal DQA Data Path
5
PREC
9
Column Decode & Mask
Mux
5
BC
Buffer
Write
9
7
C
Mux
9
8
RD, WR
MB
COLM
DQA8..DQA0
RCLK
8
MA
9
9
9
™