k4r881869e Samsung Semiconductor, Inc., k4r881869e Datasheet - Page 19

• Manufacturer Part Number: k4r881869e
• Description: 288mbit Rdram 512k X 18bit X 32s Banks
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869E
Capacitance and Inductance
a. This value is a combination of the device IO circuitry and package capacitances
a. This value is a combination of the device IO circuitry and package capacitances.
L
L
∆L
C
C
∆C
R
L
C
C
I
12
I
12
I
I ,CMOS
I ,CMOS
I ,CMOS,SIO
I
I
Symbol
Symbol
RSL effective input inductance
RSL effective input inductance
RSL effective input inductance
Mutual inductance between any DQA or DQB RSL signals.
Mutual inductance between any ROW or COL RSL signals.
Difference in L
RSL effective input capacitance
RSL effective input capacitance
RSL effective input capacitance
Mutual capacitance between any RSL signals.
Difference in C
CFM, CFMN} and any RSL pins of a single device.
RSL effective input resistance
RSL effective input resistance
RSL effective input resistance
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD)
CMOS effective input capacitance (SIO1, SIO0)
Parameter and Conditions - RSL pins
Parameter and Conditions - CMOS pins
I
I
value between any RSL pins of a single device.
value between average of {CTM, CTMN,
Table 18: CMOS Pin Parasitics
Table 17: RSL Pin Parasitics
@ t
@ t
@ t
@ t
@ t
@ t
a
a
a
@ t
@ t
@ t
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
CYCLE
=1.667ns
=1.875ns
=2.5ns
=1.667ns
=1.875ns
=2.5ns
=1.667ns
=2.5ns
=1.875ns
Page 17
a
a
Min
2.0
2.0
2.0
4
4
4
-
-
-
-
-
-
-
-
Min
1.7
-
-
Version 1.4 Dec. 2003
Max
0.06
1.8
3.5
3.5
4.0
0.2
0.6
2.3
2.3
2.4
0.1
10
10
15
Max
Direct RDRAM
8.0
2.1
7.0
Unit
Unit
nH
nH
nH
nH
pF
pF
pF
nH
Ω
pF
pF
Figure 63
Figure 63
Figure 63
Figure 63
Figure 63
Figure 63
Figure 63
Figure 63
Figure
Figure
™