m470t6464az3 Samsung Semiconductor, Inc., m470t6464az3 Datasheet - Page 4

• Manufacturer Part Number: m470t6464az3
• Description: Ddr2 Unbuffered Sodimm 200pin Unbuffered Sodimm Based On 1gb A-die 64-bit Non-ecc
• Manufacturer: Samsung Semiconductor, Inc.

1.0 DDR2 Unbuffered DIMM Ordering Information
2.0 Features
Note :
1. “Z” of Part number(11th digit) stand for Lead-free products.
2. “3” of Part number(12th digit) stand for Dummy Pad PCB products.
3.0 Address Configuration
SODIMM
Note : For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
M470T6464AZ3-C(L)E6/D5/CC
M470T2864AZ3-C(L)E6/D5/CC
M470T5669AZ0-C(L)E6/D5/CC
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• V
• 200 MHz f
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a T
• Package: 84ball FBGA - 64Mx16, 70ball FBGA - st.256Mx8
• All of Lead-free products are compliant for RoHS
-
DDQ
support High Temperature Self-Refresh rate enable feature
128Mx8(1Gb) based Module
64Mx16(1Gb) based Module
Part Number
= 1.8V ± 0.1V
CL-tRCD-tRP
Speed@CL3
Speed@CL4
Speed@CL5
Organization
CK
for 400Mb/sec/pin, 267MHz f
Density
512MB
1GB
2GB
E6 (DDR2-667)
Row Address
5-5-5
CK
A0-A13
A0-A12
400
533
667
Organization
128Mx64
256Mx64
64Mx64
for 533Mb/sec/pin, 333MHz f
CASE
85qC, 3.9us at 85qC < T
st.256Mx8 (K4T2G074QA-C(L)E6/D5/CC)*8
64Mx16 (K4T1G164QA-C(L)E6/D5/CC)*4
64Mx16 (K4T1G164QA-C(L)E6/D5/CC)*8
4 of 20
Column Address
Component Composition
D5 (DDR2-533)
A0-A9
A0-A9
4-4-4
400
533
533
CK
CASE
for 667Mb/sec/pin
< 95 qC
Bank Address
BA0-BA2
BA0-BA2
CC (DDR2-400)
3-3-3
400
400
Number of Rank
Rev. 1.4 March 2007
-
DDR2 SDRAM
1
2
2
Auto Precharge
A10
A10
Height
Mbps
Mbps
Mbps
30mm
30mm
30mm
Unit
CK