m470t6464az3 Samsung Semiconductor, Inc., m470t6464az3 Datasheet

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m470t6464az3

Manufacturer Part Number
m470t6464az3
Description
Ddr2 Unbuffered Sodimm 200pin Unbuffered Sodimm Based On 1gb A-die 64-bit Non-ecc
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
SODIMM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
200pin Unbuffered SODIMM based on 1Gb A-die
* Samsung Electronics reserves the right to change products or specification without notice.
DDR2 Unbuffered SODIMM
68FBGA & 84FBGA with Pb-Free
(RoHS compliant)
64-bit Non-ECC
1 of 20
Rev. 1.4 March 2007
DDR2 SDRAM

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m470t6464az3 Summary of contents

Page 1

SODIMM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 68FBGA & 84FBGA with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE ...

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... Refresh Parameters by Device Density 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin 13.3 Timing Parameters by Speed Grade 14.0 Physical Dimensions : ............................................................................................................. 18 14.1 64Mbx16 based 128Mx64 Module (2 Rank) - M470T2864AZ3 14.2 64Mbx16 based 64Mx64 Module (1 Rank) - M470T6464AZ3 14.3 st.256Mbx8 based 256Mx64 Module (2 Ranks) - M470T5669AZ0 .......................................................................................... 7 ........................................................................................ 8 .......................................................................................... 9 ..................................................................... 10 ...

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SODIMM Revision History Revision Month Year 1.0 July 2005 1.1 August 2005 1.2 March 2006 1.3 September 2006 1.4 March 2007 History - Initial Release - Revised IDD Current Values - Revised Physical Dimensions for 2GB - Added the VddSPD ...

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... SODIMM 1.0 DDR2 Unbuffered DIMM Ordering Information Part Number Density M470T6464AZ3-C(L)E6/D5/CC 512MB M470T2864AZ3-C(L)E6/D5/CC 1GB M470T5669AZ0-C(L)E6/D5/CC 2GB Note : 1. “Z” of Part number(11th digit) stand for Lead-free products. 2. “3” of Part number(12th digit) stand for Dummy Pad PCB products. 2.0 Features • Performance range Speed@CL3 ...

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... DQS2 Note : Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. 5.0 Pin Description Pin Name Description CK0,CK1 Clock Inputs, positive line CK0,CK1 Clock Inputs, negative line CKE0,CKE1 Clock Enables RAS Row Address Strobe ...

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... DDR2 SDRAMs and is sent at the leading edge of the data In/Out DQS0~DQS7 window. DQS signals are complements, and timing is relative to the crosspoint of respective DQS and DQS If the module operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately ...

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... SODIMM 7.0 Functional Block Diagram : 7.1 1GB, 128Mx64 Module - M470T2864AZ3 (Populated as 2 rank of x16 DDR2 SDRAMs 5% ODT1 ODT0 CKE1 CKE0 S1 S0 DQS0 LDQS K D DQS0 LDQS LDM E T DM0 DQ0 I/O 0 DQ1 I DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 UDQS UDQS ...

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... SODIMM 7.2 512MB, 64Mx64 Module - M470T6464AZ3 (Populated as 1 rank of x16 DDR2 SDRAMs 5% CKE0 ODT0 S0 DQS0 LDQS DQS0 LDQS LDM DM0 DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 UDQS UDQS DQS1 UDM DM1 DQ8 I/O 8 DQ9 I/O 9 DQ10 I/O 10 DQ11 I/O 11 DQ12 I/O 12 DQ13 I/O 13 DQ14 ...

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... SODIMM 7.3 2GB, 256Mx64 Module - M470T5669AZ0 (Populated as 2 ranks of x8 DDR2 SDRAMs 5% CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 CS0 DQS DQS0 DQS DM DM0 DQ0 I/O 0 DQ1 I DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 DQS CS0 DQS DQS1 DM DM1 DQ8 I/O 8 DQ9 I DQ10 ...

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SODIMM 8.0 Absolute Maximum DC Ratings Symbol Parameter Voltage on V pin relative Voltage on V pin relative DDQ DDQ Voltage on V pin relative DDL DDL Voltage on ...

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SODIMM 9.2 Operating Temperature Condition Symbol Parameter TOPER Operating Temperature Note : 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard ...

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SODIMM 10.0 IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Operating one bank active-precharge current CK(IDD RC(IDD), t RAS = t RASmin(IDD); CKE is ...

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... IDD4W 960 IDD4R 980 IDD5 1,060 IDD6 120 48 IDD7 1,580 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 11.2 M470T6464AZ3: 64Mx64 512MB Module 667@CL=5 Symbol CE6 LE6 IDD0 480 IDD1 560 IDD2P 60 32 IDD2Q ...

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... IDD3N 840 IDD4W 1,600 IDD4R 1,600 IDD5 2,120 IDD6 240 96 IDD7 2,760 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 533@CL=4 400@CL=3 CD5 LD5 CCC 1,040 1,000 1,120 1,080 240 128 240 720 ...

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... DDR2 SDRAM (V =1.8V, V =1.8V, T =25 DD DDQ A Min Max Min Max Units M470T6464AZ3 M470T5669AZ0 - 5 512Mb 1Gb 2Gb 4Gb Units 105 127.5 195 327.5 ns 7.8 7.8 7.8 7.8 Ps 3.9 3.9 3.9 3.9 Ps DDR2-400(CC) ...

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SODIMM 13.3 Timing Parameters by Speed Grade (Refer to notes for informations related to this table at the bottom) Parameter Symbol DQ output access time from CK/CK tAC DQS output access time from CK/CK tDQSCK CK high-level width tCH CK ...

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SODIMM Parameter Symbol Exit active power down to read command tXARD Exit active power down to read command tXARDS (slow exit, lower power) CKE minimum pulse width t CKE (high and low pulse width) t ODT turn-on delay AOND t ...

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... SODIMM 14.0 Physical Dimensions : 14.1 64Mbx16 based 128Mx64 Module (2 Rank) - M470T2864AZ3 a 1 11.40 16. FRONT SIDE 4. 2.70 r 0.10 1.50 r 0.10  1.0 r 0.05  4.00 r 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QA 67.60 mm 2.00 b 199 47.40 63.00 200 67.60 mm DETAIL a BACK SIDE  4.00 r 0.10  1.0 r 0.05  1.80 r 0.10  2.40 r 0.10 4. DDR2 SDRAM Units : Millimeters 3.8 mm max 1 ...

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... SODIMM 14.2 64Mbx16 based 64Mx64 Module (1 Rank) - M470T6464AZ3 a 1 11.40 16. DETAIL a FRONT SIDE 4. 2.70 r 0.10 1.50 r 0.10  1.0 r 0.05  4.00 r 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QA 67.60 mm 2.00 b 199 47.40 63.00 200 67.60 mm BACK SIDE  4.00 r 0.10  1.0 r 0.05  1.80 r 0.10  2.40 r 0.10 4. DDR2 SDRAM Units : Millimeters 3.8 mm max 1.1mm max DETAIL b 0 ...

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... SODIMM 14.3 st.256Mbx8 based 256Mx64 Module (2 Ranks) - M470T5669AZ0 1 a 11.40 16. DETAIL a FRONT SIDE 4. 2.70 r 0.10 1.50 r 0.10 1. 1.0 r 0.05  4.00 r 0.10 The used device is st.256M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T2G074QA 67.60 mm 2.00 199 b 47.40 63.00 200 67.60 mm BACK SIDE  4.00 r 0.10  1.0 r 0.05  0.10  2.40 r 0.10 4. DDR2 SDRAM Units : Millimeters 3.8 mm max 1.1mm max DETAIL b 0.60  0.45 r 0.03 Rev. 1.4 March 2007 ...

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