m464s3254hus Samsung Semiconductor, Inc., m464s3254hus Datasheet - Page 9

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m464s3254hus

Manufacturer Part Number
m464s3254hus
Description
Sdram Unbuffered Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
8.0 Absolute Maximum Ratings
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
9.0 DC Operating Conditions And Characteristics
Recommended operating conditions(Voltage referenced to V
Note :
1. V
2. V
3. Any input 0V ≤ V
10.0 Capacitance(Max.)
256MB, 512MB Unbuffered SODIMM
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
Parameter
DD
Parameter
supply relative to Vss
IN
≤ V
0
DDQ
~ A
Parameter
.
12
, BA0 ~ BA1)
Symbol
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
V
V
Symbol
DD,
IN
Min
-0.3
3.0
2.0
2.4
-10
T
, V
-
I
P
STG
OS
V
Symbol
D
SS
OUT
DDQ
C
C
C
C
C
C
C
OUT
=0V, T
IN1
IN2
IN3
IN4
IN5
IN6
A
=0 to 70°C)
Typ
3.3
3.0
0
-
-
-
Min
M464S3254HUS
25
25
15
15
15
10
10
(V
DD
1.0 * # of component
= 3.3V, T
V
DDQ
Max
Max
-55 ~ +150
3.6
0.8
0.4
45
45
25
21
25
12
12
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
Value
+0.3
A
50
= 23°C, f = 1MHz, V
Rev. 1.0 November 2005
Min
M464S6453HV0
45
45
25
15
15
10
13
Unit
uA
V
V
V
V
V
REF
Max
90
90
45
21
25
15
18
= 1.4V ± 200 mV)
I
I
OH
OL
Unit
SDRAM
mA
°C
W
Note
V
V
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF

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