m464s3254hus Samsung Semiconductor, Inc., m464s3254hus Datasheet - Page 10
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m464s3254hus
Manufacturer Part Number
m464s3254hus
Description
Sdram Unbuffered Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M464S3254HUS.pdf
(15 pages)
11.0 DC CHARACTERISTICS
11.1 M464S3254HUS (32M x 64, 256MB Module)
Note :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
256MB, 512MB Unbuffered SODIMM
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
11.2 M464S6453HV0 (64M x64, 512MB Module)
Parameter
Parameter
Symbol
Symbol
I
I
I
I
I
I
I
I
CC2
CC3
CC2
CC3
I
CC2
I
I
CC3
I
I
CC2
I
I
CC3
I
CC2
CC3
CC2
CC3
I
CC2
CC3
I
I
I
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
CC1
CC4
CC5
CC6
PS
NS
PS
NS
PS
NS
PS
NS
P
N
P
N
P
N
P
N
Burst length = 1, t
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst 4Banks activated t
t
CKE ≤ 0.2V
Burst length = 1, t
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst 4Banks activated t
t
CKE ≤ 0.2V
O
RC
O
RC
= 0 mA,
= 0 mA,
≥ t
≥ t
RC
RC
IL
IH
IH
IL
IH
IH
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
(Recommended operating condition unless otherwise noted, T
(Recommended operating condition unless otherwise noted, T
IL
IL
IL
IL
Test Condition
Test Condition
(max), t
(max), t
(max), t
(max), t
RC
CC
CC
RC
CC
CC
≥ t
= 10ns
= 10ns
≥ t
= 10ns
= 10ns
RC
RC
IH
IH
IH
IH
CC
CC
CC
CC
IL
IL
IL
IL
(min), t
(min), t
(min), t
(min), t
(min), I
(min), I
(max), t
(max), t
(max), t
(max), t
=∞
=∞
=∞
=∞
CCD
CCD
CC
CC
CC
CC
O
O
CC
CC
CC
CC
= 2CLKs
= 2CLKs
= 0 mA
= 0 mA
= 10ns
= 10ns
= 10ns
= 10ns
=∞
=∞
=∞
=∞
C
C
L
L
Rev. 1.0 November 2005
Version
Version
1,000
1,650
460
160
200
200
620
820
840
320
160
100
100
400
400
7A
7A
16
16
80
50
50
24
12
32
32
48
24
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
A
A
= 0 to 70°C)
= 0 to 70°C)
Note
Note
1
1
2
1
1
2