k9f1208u0c Samsung Semiconductor, Inc., k9f1208u0c Datasheet - Page 11
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k9f1208u0c
Manufacturer Part Number
k9f1208u0c
Description
Flash Mem Parallel 3.3v 512m-bit 64m X 8 48-pin Tsop-i T/r
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9F1208U0C.pdf
(38 pages)
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VALID BLOCK
NOTE :
1. The K9F1208X0C may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
3. Minimum 1,004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F1208X0C-XCB0 :TA=0 to 70°C, K9F1208X0C-XIB0:TA=-40 to 85°C).
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
K9F1208U0C
K9F1208R0C
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F1208R0C:Output Load (Vcc:1.8V +/-10%)
K9F1208B0C:Output Load (Vcc:2.7V +/-10%)
K9F1208U0C:Output Load (Vcc:3.3V +/-10%)
K9F1208U0C:Output Load (Vcc:3.0V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
CLE
H
H
X
X
X
X
X
L
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
ALE
X
H
H
X
X
X
X
L
L
L
L
L
Item
(1)
Parameter
IL
or V
(TA=25°C, VCC=1.8V/2.7V/3.3V, f=1.0MHz)
K9F1208B0C
CE
IH.
X
X
X
X
H
L
L
L
L
L
L
L
WE
H
H
X
X
X
X
X
Symbol
Symbol
N
C
C
VB
I/O
RE
IN
H
H
H
H
H
H
H
X
X
X
X
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF
0V/V
WP
K9F1208R0C
H
H
H
H
H
X
X
X
X
X
L
Test Condition
CC
0V to V
V
(2)
5ns
CC
V
V
-
4,026
IL
IN
Data Input
Data Output
During Read (Busy) on K9F1208X0C_P
During Read (Busy) except on K9F1208X0C_P
During Program (Busy)
During Erase (Busy)
Write Protect
Stand-by
Min
/2
=0V
=0V
CC
Read Mode
Write Mode
11
Command Input
Address Input (4 clocks)
Command Input
Address Input (4 clocks)
Typ.
Min
K9F1208B0C
-
-
-
0V to Vcc
Value
Vcc/2
5ns
-
Mode
FLASH MEMORY
4,096
Max
Max
10
10
1 TTL GATE and CL=50pF
1 TTL GATE and
K9F1208U0C
0.4V to 2.4V
CL=100pF
1.5V
5ns
Blocks
Unit
Unit
pF
pF