mt16jss51264hy-1g1 Micron Semiconductor Products, mt16jss51264hy-1g1 Datasheet - Page 10

• Manufacturer Part Number: mt16jss51264hy-1g1
• Description: 4gb X64, Dr 204-pin Ddr3 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

I
Table 9:
PDF: 09005aef832ed836/Source: 09005aef832ed8fb
JSS16C512x64H.fm - Rev. A 5/08 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
All banks interleaved read current
DD
Specifications
DDR3 I
Values are for the MT41J512M8THU DDR3 SDRAM only and are computed from values specified in the
4Gb TwinDie (512 Meg x 8) component data sheet
DD
Specifications and Conditions – 4GB
C
= 85°C
C
= 95°C
4GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
I
CDD
CDD
CDD
CDD
CDD
I
I
CDD
CDD
CDD
CDD
CDD
I
I
CDD
CDD
CDD
CDD
6ET
4W
2Q
2N
3N
4R
5B
2P
2P
3P
0
1
6
7
Electrical Specifications
1333
1,160
1,360
2,160
2,520
2,560
3,800
160
280
640
680
560
840
144
192
©2008 Micron Technology, Inc. All rights reserved
1066
1,080
1,200
1,920
2,240
2,440
3,560
160
280
560
600
480
720
144
192
1,040
1,680
1,960
2,320
3,320
800
920
160
280
480
520
440
640
144
192
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA