mt16vddf6464hy-26a Micron Semiconductor Products, mt16vddf6464hy-26a Datasheet - Page 15

• Manufacturer Part Number: mt16vddf6464hy-26a
• Description: 512mb, 1gb X64 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 13: I
Notes: 1–5, 8, 10, 12, 48; DDR SDRAM devices only; notes appear on pages 20–23; 0°C £ T
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
PARAMETER/CONDITION
NOTE:
OPERATING CURRENT: One device bank; Active-
Precharge;
DQS inputs changing once per clock cycle; Address and
control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-
Precharge; Burst = 4;
I
per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All
device banks idle; Power-down mode;
CKE = (LOW)
IDLE STANDBY CURRENT: CS# = HIGH; All device banks
are idle;
control inputs changing once per clock
for DQ, DQS, and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One device
bank active; Power-down mode;
CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;
One device bank active
(MIN); DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing once per
clock cycle
OPERATING CURRENT: Burst = 2;
burst; One device bank active; Address and control inputs
changing once per clock cycle;
0mA
OPERATING CURRENT: Burst = 2; Writes; Continuous
burst; One device bank
inputs changing once per clock cycle;
DM, and DQS inputs changing twice per clock cycle
AUTO REFRESH BURST CURRENT:
SELF REFRESH CURRENT: CKE £ 0.2V
OPERATING CURRENT: Four device bank interleaving
READs
t
change only during Active READ, or WRITE commands
OUT
RC allowed;
a - Value calculated as one module rank in this operating condition, and all other module ranks in I
b - Value calculated reflects all module ranks in this operating condition.
= 0mA; Address and control inputs
(Burst = 4) with auto precharge,
t
CK =
t
RC =
t
CK =
t
DD
CK (MIN);
t
RC (MIN);
t
CK (MIN); Address and control inputs
Specifications and Conditions – 1GB
t
RC =
;
t
active; Address and control
RC =
CKE = HIGH; Address and other
t
t
RC (MIN);
CK =
t
t
RAS (MAX);
CK =
Reads; Continuous
t
t
CK (MIN); DQ, DM and
CK =
t
CK (MIN);
t
CK =
cycle. V
t
t
CK =
t
t
RC = minimum
t
CK =
CK (MIN);
RC =
changing once
t
RC = 7.8125µs
t
t
CK (MIN); DQ,
CK =
t
CK (MIN);
t
t
IN
CK (MIN);
I
RFC (MIN)
OUT
t
= V
CK
=
REF
15
I
I
I
I
I
I
I
DD4W
SYM
DD3N
DD5A
I
I
DD2P
DD3P
DD4R
I
I
I
DD2F
DD0
DD1
DD5
DD6
DD7
1,080
1,320
1,360
1,280
4,640
3,280
-335
Micron Technology, Inc., reserves the right to change products or specifications without notice.
720
560
720
160
80
80
1,080
1,320
1,360
1,280
4,640
3,240
-262
720
560
720
160
80
80
200-PIN DDR SODIMM
MAX
A
£ +70°C; V
-26A/-
512MB, 1GB (x64)
1,200
1,200
1,120
4,480
2,840
265
960
640
480
640
160
80
80
DD
DD
1,200
1,200
1,120
4,480
2,840
-202
960
640
480
640
160
80
80
, V
2p (CKE LOW) mode.
DD
©2003 Micron Technology, Inc.
Q = +2.5V ±0.2V
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
S
21, 28,
21, 28,
NOTE
20, 42
20, 42
20, 42
20, 44
24, 44
20, 43
44
45
44
41
20
S
9