mt16vddf6464hy-40b Micron Semiconductor Products, mt16vddf6464hy-40b Datasheet - Page 2

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mt16vddf6464hy-40b

Manufacturer Part Number
mt16vddf6464hy-40b
Description
512mb, 1gb X64, Dr Pc3200 200-pin Ddr Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
Table 2:
Table 3:
PDF: 09005aef80b57837/Source: 09005aef80b577fa
DDAF16C64_128x64H.fm - Rev. E 10/06 EN
Part Number
Part Number
Refresh count
Device row addressing
Device bank addressing
Device configuration
Device column addressing
Module rank addressing
MT16VDDF6464HG-40B__
MT16VDDF6464HY-40B__
MT16VDDF12864HG-40B__
MT16VDDF12864HY-40B__
Address Table
Part Numbers and Timing Parameters – 512MB
Part Numbers and Timing Parameters – 1GB
Note:
All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current Revision codes. Example: MT16VDDF6464HG-40BA1.
Module
Density
Module
Density
512MB
512MB
1GB
1GB
Configuration
Configuration
128 Meg x 64
128 Meg x 64
64 Meg x 64
64 Meg x 64
512MB, 1GB: (x64, DR) PC3200 200-Pin DDR SODIMM
2
256Mb (32 Meg x 8)
Transfer
Transfer
3.2 GB/s
3.2 GB/s
3.2 GB/s
3.2 GB/s
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
2 (S0#, S1#)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Rate
Rate
512MB
8K
Memory Clock/
Memory Clock/
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
Data Rate
Data Rate
©2004 Micron Technology, Inc. All rights reserved.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
4 (BA0, BA1)
8K (A0–A12)
2 (S0#, S1#)
(CL -
(CL -
1GB
8K
Latency
Latency
t
t
3-3-3
3-3-3
3-3-3
3-3-3
RCD -
RCD -
Features
t
t
RP)
RP)

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