mt8vddt3264hd Micron Semiconductor Products, mt8vddt3264hd Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
mt8vddt3264hd
Manufacturer Part Number
mt8vddt3264hd
Description
256mb, 512mb X64, Dr 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT8VDDT3264HD.pdf
(13 pages)
Electrical Specifications
Table 7:
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C32_64x64HD.fm - Rev. E 11/08 EN
V
Symbol
IN
V
, V
I
T
OZ
DD
I
A
I
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
supply voltage relative to V
Notes:
input 0V ≤ V
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
OUT
SS
SS
≤ V
DD
1
IN
Q; DQ are
≤ V
DD
7
;
Address inputs,
RAS#, CAS#, WE#, BA
CK, CK#, S#, CKE
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
Electrical Specifications
Min
–1.0
–0.5
©2004 Micron Technology, Inc. All rights reserved.
–16
–10
–40
–8
–4
0
Applications,” available
Max
+3.6
+3.2
+16
+10
+70
+85
+8
+4
Units
µA
µA
°C
°C
V
V