mt8htf3264hdy Micron Semiconductor Products, mt8htf3264hdy Datasheet - Page 15

• Manufacturer Part Number: mt8htf3264hdy
• Description: Module Ddr2 512mb 200-sodimm
• Manufacturer: Micron Semiconductor Products

Table 12: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating one bank active-precharge current:
(I
Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
= CL (I
t
puts are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are float-
ing
Precharge quiet standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus
inputs are switching
Active power-down current: All device banks open;
t
stable; Data bus inputs are floating
Active standby current: All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst read,
I
t
inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
RCD (I
CK (I
RP (I
OUT
RP =
DD
DD
),
),
= 0mA; BL = 4, CL = CL (I
DD
DD
t
t
t
RAS =
DD
RP (I
RC =
DD
DD
OUT
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
); CKE is LOW; Other control and address bus inputs are
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address bus in-
),
DD
= 0mA; BL = 4, CL = CL (I
t
t
RP =
RC (I
t
); CKE is HIGH, S# is HIGH between valid commands; Address bus
RAS MIN (I
DD
t
RP (I
t
CK =
),
DD
t
RRD =
DD
Specifications and Conditions – 1GB (Die Revision A)
DD
DD
t
t
); CKE is HIGH, S# is HIGH between valid commands;
CK (I
CK =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands;
t
RRD (I
DD
DD
t
CK (I
), AL = 0;
),
t
RC =
DD
DD
DD
t
CK =
),
); REFRESH command at every
), AL =
t
t
RCD =
RC (I
t
CK =
t
CK (I
DD4W
DD
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
RCD (I
t
t
),
DD
RCD (I
CK (I
t
),
RAS =
t
CK =
t
t
DD
RAS =
CK =
DD
t
DD
CK =
) - 1 ×
),
t
); CKE is HIGH, S# is
t
CK =
t
t
RAS MIN (I
CK (I
RAS =
t
CK (I
t
OUT
t
CK =
t
RAS MAX (I
t
CK (I
CK =
15
t
CK (I
DD
= 0mA; BL = 4, CL
DD
t
),
t
DD
RAS MAX (I
CK (I
),
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
t
DD
CK (I
); CKE is
RAS =
t
DD
RC =
);
t
RFC (I
DD
),
t
DD
DD
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
); CKE is
RCD =
t
t
),
); CKE
RC
RAS
DD
t
RP =
DD
t
CK
)
),
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
I
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
DD7
1
1
2
2
1
2
2
1
2
2
2
1
-667
2160
1420
560
540
520
560
320
112
600
820
900
56
24
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
-53E
2000
1380
460
500
360
400
280
112
480
740
740
56
24
Specifications
1920
1320
-40E
440
460
320
320
280
112
440
640
640
56
24
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA