mt8htf12864ay Micron Semiconductor Products, mt8htf12864ay Datasheet - Page 10
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mt8htf12864ay
Manufacturer Part Number
mt8htf12864ay
Description
Module Ddr2 Sdram 256mb 240-dimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT8HTF12864AY.pdf
(18 pages)
Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef80e2ff8d
htf8c32_64_128x64aypdf - Rev. G 3/10 EN
V
V
Symbol
DD
IN
I
VREF
, V
T
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
under test = 0V)
Output leakage current; 0V ≤ V
and ODT are disabled
V
DDR2 SDRAM component operating tempera-
ture
Module ambient operating temperature
DD
REF
REF
/V
2
input 0V ≤ V
leakage current; V
DDQ
Notes:
supply voltage relative to V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
IN
able on Micron’s Web site.
≤ 0.95V; (All other pins not
256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
REF
= valid V
OUT
SS
REF
≤ V
SS
level
DDQ
IN
≤ V
; DQ
10
DD
;
Address inputs, RAS#,
CAS#, WE#, S#, CKE,
ODT, BA
CK0, CK0#
(raw card D)
CK1, CK1#, CK2, CK2#
(raw card D)
CK1, CK1#, CK2, CK2#
(alternate clock)
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–0.5
–0.5
–40
–10
–15
–20
–16
–40
–40
–5
–5
0
0
© 2003 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
40
10
15
20
16
85
95
70
85
5
5
Units
µA
µA
µA
°C
°C
°C
°C
V
V