mt18jbf25672pd Micron Semiconductor Products, mt18jbf25672pd Datasheet - Page 11

• Manufacturer Part Number: mt18jbf25672pd
• Description: 2gb X72, Ecc, Dr 240-pin Ddr3 Sdram Vlp Rdimm
• Manufacturer: Micron Semiconductor Products

I
Table 10:
PDF: 09005aef83244dba/Source:09005aef83244e3a
JBF18C256x72PDY.fm - Rev. B 6/08 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
All banks interleaved read current
DD
Specifications
DDR3 I
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
Notes:
DD
Specifications and Conditions – 2GB
1. One module rank in the active I
2. All ranks in this I
C
= 85°C
DD
2GB (x72, ECC, DR) 240-Pin DDR3 SDRAM VLP RDIMM
condition.
C
= 95°C
11
DD
; the other rank in I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
DD
DD
DD
DD
6ET
4W
2Q
2N
3N
4R
5B
2P
2P
3P
0
1
6
7
1
1
2
1
2
2
2
1
2
DD
2
2
2
1
2
2P (slow exit).
Electrical Specifications
1333
1,080
1,260
1,080
1,890
1,800
4,320
4,500
180
450
900
990
630
108
162
©2008 Micron Technology, Inc. All rights reserved
1066
1,170
1,530
1,530
3,960
3,600
990
180
450
810
900
540
990
108
162
1,080
1,260
1,260
3,600
3,240
800
900
180
450
720
810
450
900
108
162
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA