mt18ld472ag-5 Micron Semiconductor Products, mt18ld472ag-5 Datasheet

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mt18ld472ag-5

Manufacturer Part Number
mt18ld472ag-5
Description
2, 4 Meg X 72 Nonbuffered Dram Dimms
Manufacturer
Micron Semiconductor Products
Datasheet
OBSOLETE
DRAM
MODULE
FEATURES
• JEDEC-standard, eight-CAS#, ECC pinout in a 168-pin,
• 16MB (2 Meg x 72) and 32MB (4 Meg x 72)
• Nonbuffered
• High-performance CMOS silicon-gate process
• Single +3.3V 0.3V power supply
• All inputs, outputs and clocks are TTL-compatible
• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#
• 2,048-cycle refresh distributed across 32ms
• FAST-PAGE-MODE (FPM) or Extended Data-Out
• Serial presence-detect (SPD)
OPTIONS
• Package
• Timing
• Access Cycles
*EDO version only
KEY TIMING PARAMETERS
EDO Operating Mode
FPM Operating Mode
NOTE: Pin symbols in parentheses are not used on these modules but may be used
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
SPEED
SPEED
dual in-line memory module (DIMM)
(CBR) and HIDDEN
(EDO) PAGE MODE access cycles
168-pin DIMM (gold)
50ns access
60ns access
FAST PAGE MODE
EDO PAGE MODE
-5
-6
-6
for other modules in this product family. They are for reference only.
104ns
110ns
84ns
t
t
RC
RC
50ns
60ns
60ns
t
t
RAC
RAC
20ns
25ns
35ns
t
t
PC
PC
25ns
30ns
30ns
t
t
AA
AA
MARKING
13ns
15ns
15ns
t
t
CAC
CAC
None
G
-5*
-6
X
10ns
40ns
t
8ns
CAS
t
RP
1
MT9LD272A(X), MT18LD472A(X)
For the latest data sheet revisions, please refer to the Micron
Web site: www.micron.com/mti/msp/html/datasheet.html
PIN
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
1
2
3
4
5
6
7
8
9
NC (A12)
SYMBOL
NONBUFFERED DRAM DIMMs
PIN ASSIGNMENT (Front View)
CAS0#
CAS1#
RAS0#
WE0#
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
OE0#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
RFU
CB0
CB1
A10
V
V
V
V
V
V
V
V
V
NC
NC
A0
A2
A4
A6
A8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
DD
DD
SS
SS
SS
SS
PIN
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
168-Pin DIMM
SYMBOL
RAS2#
CAS2#
CAS3#
WE2#
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
OE2#
SDA
CB2
CB3
RFU
SCL
V
V
V
V
V
V
V
V
V
NC
NC
NC
NC
NC
NC
NC
DD
DD
DD
DD
SS
SS
SS
SS
SS
102
103
107
108
109
111
116
PIN
100
101
104
105
106
110
112
113
114
115
117
118
119
120
121
122
123
124
125
126
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
SYMBOL
NC (A11)
NC (A13)
2, 4 MEG x 72
CAS4#
CAS5#
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
RFU
RFU
RFU
RFU
CB4
CB5
V
V
V
V
V
V
V
V
NC
NC
NC
A1
A3
A5
A7
A9
SS
DD
SS
DD
SS
DD
SS
DD
1998, Micron Technology, Inc.
PIN
127
128
129 NC/RAS3#*
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
SYMBOL
CAS6#
CAS7#
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
RFU
RFU
CB6
CB7
RFU
SA0
SA1
SA2
V
V
V
V
V
V
V
V
V
NC
NC
NC
NC
NC
NC
DD
DD
DD
DD
SS
SS
SS
SS
SS

Related parts for mt18ld472ag-5

mt18ld472ag-5 Summary of contents

Page 1

... PC -6 110ns 60ns 35ns NOTE: Pin symbols in parentheses are not used on these modules but may be used for other modules in this product family. They are for reference only Meg x 72 Nonbuffered DRAM DIMMs DM60.p65 – Rev. 6/98 MT9LD272A(X), MT18LD472A(X) For the latest data sheet revisions, please refer to the Micron Web site: www ...

Page 2

... OBSOLETE PART NUMBERS EDO Operating Mode PART NUMBER CONFIGURATION MT9LD272AG Meg x 72 ECC MT9LD272AG Meg x 72 ECC MT18LD472AG Meg x 72 ECC MT18LD472AG Meg x 72 ECC FPM Operating Mode PART NUMBER CONFIGURATION MT9LD272AG-6 2 Meg x 72 ECC MT18LD472AG-6 4 Meg x 72 ECC ...

Page 3

OBSOLETE together with SA(2:0), which provide eight unique DIMM/ EEPROM addresses. SPD CLOCK AND DATA CONVENTIONS Data states on the SDA line can change only during SCL LOW. SDA state changes during SCL HIGH are reserved for indicating start and ...

Page 4

OBSOLETE DQ0-DQ7 WE0# WE# U1 OE0# OE# RAS0# RAS# CAS0# CAS# A0–A10 CAS1# 11 CAS2# CAS3# A0-A10 DQ32-DQ39 DQ0-DQ7 WE2# WE# U6 OE2# OE# RAS2# RAS# CAS4# CAS# A0–A10 CAS5# 11 CAS6# CAS7# SPD SCL SDA ...

Page 5

OBSOLETE DQ0-DQ3 DQ4-DQ7 DQ0-DQ3 DQ0-DQ3 WE0# WE# WE OE0# OE# OE# RAS0# RAS# RAS# CAS0# CAS# A0–A10 CAS# A0–A10 CAS1 CAS2# CAS3# A0-A10 DQ32-DQ35 DQ36-DQ39 DQ0-DQ3 DQ0-DQ3 WE2# WE# WE# U10 U11 OE2# OE# OE# RAS2# ...

Page 6

... Ground. SS SDA Input/Output Serial Presence-Detect Data. SDA is a bidirectional pin used to transfer addresses and data into and data out of the presence-detect portion of the module. SCL Input Serial Clock for Presence-Detect. SCL is used to synchronize the presence-detect data transfer to and from the module. ...

Page 7

... RESERVED 62 SPD REVISION 63 CHECKSUM FOR BYTES 0-62 64 MANUFACTURER’S JEDEC ID CODE 65-71 MANUFACTURER’S JEDEC CODE (CONT.) 72 MANUFACTURING LOCATION 73-90 MODULE PART NUMBER (ASCII) 91 PCB IDENTIFICATION CODE 92 IDENTIFICATION CODE (CONT.) 93 YEAR OF MANUFACTURE IN BCD 94 WEEK OF MANUFACTURE IN BCD 95-98 MODULE SERIAL NUMBER 99-125 MANUFACTURE SPECIFIC DATA (RSVD) NOTE: 1. “ ...

Page 8

OBSOLETE ABSOLUTE MAXIMUM RATINGS* Voltage on V Pin Relative Voltage on Inputs or I/O Pins Relative to V ................................................ -1V to +4.6V SS Operating Temperature, T (ambient) .......... + Storage Temperature ...

Page 9

OBSOLETE I OPERATING CONDITIONS AND MAXIMUM LIMITS CC (Notes +3.3V 0.3V) DD PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (RAS# = CAS 0.2V) DD OPERATING ...

Page 10

OBSOLETE CAPACITANCE PARAMETER Input Capacitance: A0-A10 Input Capacitance: WE0#, WE2#, OE0#, OE2# Input Capacitance: RAS0#, RAS2# Input Capacitance: CAS0#-CAS7# Input Capacitance: SCL, SA0-SA2 Input/Output Capacitance: DQ0-DQ63, CB0-CB7, SDA FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes ...

Page 11

OBSOLETE FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 29 +3.3V 0.3V CHARACTERISTICS - FAST PAGE MODE OPTION PARAMETER FAST-PAGE-MODE READ-WRITE cycle time Access time from RAS# RAS# to column-address delay ...

Page 12

OBSOLETE EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 29 +3.3V 0.3V CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER Access time from column address Column-address setup to CAS# precharge Column-address hold ...

Page 13

OBSOLETE EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 12, 29 +3.3V 0.3V CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER RAS# to CAS# precharge time READ command hold time (referenced to RAS#) ...

Page 14

OBSOLETE SERIAL PRESENCE-DETECT EEPROM OPERATING CONDITIONS (Notes +3.3V 0.3V) DD PARAMETER/CONDITION SUPPLY VOLTAGE INPUT HIGH VOLTAGE: Logic 1; All inputs INPUT LOW VOLTAGE: Logic 0; All inputs OUTPUT LOW VOLTAGE 3mA OUT INPUT LEAKAGE CURRENT: ...

Page 15

... With the FPM option, RAS# or CAS# signal to transition HIGH. In compari- t RAD son, latter of the RAS# and CAS# signals to transition t RAD (MAX) HIGH. 27. Applies to both FPM and EDO modules MEG x 72 NONBUFFERED DRAM DIMMs t t RAC and CAC no longer applied). With or t ...

Page 16

OBSOLETE NOTES (continued) 28. The SPD EEPROM WRITE cycle time ( time from a valid stop condition of a write sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit are ...

Page 17

OBSOLETE V IH RAS CRP V CAS ASR V IH ADDR WE OE FAST PAGE MODE AND EDO ...

Page 18

OBSOLETE V IH RAS CRP CAS ASR V IH ADDR ROW IOH DQ V IOL FAST PAGE MODE AND ...

Page 19

OBSOLETE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR V ROW WE IOH DQ OPEN V IOL V IH ...

Page 20

OBSOLETE V IH RAS CSH t CRP V CAS RAD t ASR t RAH V IH ADDR V ROW OPEN ...

Page 21

OBSOLETE FAST/EDO-PAGE-MODE EARLY WRITE CYCLE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS ...

Page 22

OBSOLETE (LATE WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS ASR V IH ADDR V ROW WE IOH DQ V IOL V IH OE# V ...

Page 23

OBSOLETE FAST/EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles RAS CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WE IOH ...

Page 24

OBSOLETE EDO-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP t RCD V IH CAS RAD t ASR t RAH V IH ROW ADDR WE IOH DQ ...

Page 25

OBSOLETE FAST-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP V IH CAS ASR V IH ADDR V ROW WE OE# V ...

Page 26

OBSOLETE V IH RAS CRP V CAS ASR V IH ROW ADDR WE OE EDO PAGE MODE TIMING ...

Page 27

OBSOLETE V IH RAS CRP V IH CAS ASR V IH ADDR WE RAS RPC t ...

Page 28

OBSOLETE V IH RAS CRP V IH CAS ASR t RAH V IH ADDR ROW IOH DQ V IOL FAST PAGE MODE AND EDO PAGE MODE ...

Page 29

OBSOLETE SCL t SU:STA SDA IN SDA OUT SERIAL PRESENCE-DETECT EEPROM TIMING PARAMETERS SYMBOL BUF HD:DAT t HD:STA 2, 4 Meg x 72 Nonbuffered DRAM DIMMs DM60.p65 – Rev. 6/98 SPD EEPROM ...

Page 30

OBSOLETE .079 (2.00) R (2X) .118 (3.00) (2X) .118 (3.00) TYP .250 (6.35) TYP .118 (3.00) TYP 2.625 (66.68) PIN 1 (PIN 85 on backside) .079 (2.00) R (2X) .118 (3.00) (2X) .118 (3.00) TYP .250 (6.35) TYP PIN 1 ...

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