mt18vddt12872dg-265 Micron Semiconductor Products, mt18vddt12872dg-265 Datasheet - Page 8

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mt18vddt12872dg-265

Manufacturer Part Number
mt18vddt12872dg-265
Description
256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 9:
PDF: 09005aef80e1141d/Source: 09005aef80e11353
DD18C32_64_128_256x72D.fm - Rev. D 4/08 EN
V
V
Symbol
DD
IN
, V
I
/V
T
OZ
I
A
I
DD
OUT
Q
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
/V
Notes:
input 0V ≤ V
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 9 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤1.35V (All other pins not under
256MB, 512MB, 1GB, 2GB (x72, ECC, DR) 184-Pin DDR RDIMM
OUT
SS
≤ V
SS
DD
1
IN
Q; DQ are
≤ V
DD
8
;
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK0
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal Applications,”
Electrical Specifications
Min
–1.0
–0.5
–10
–10
–40
©2003 Micron Technology, Inc. All rights reserved
–5
–4
0
Max
+3.6
+3.2
+10
+10
+70
+85
+5
+4
available
Units
µA
µA
°C
°C
V
V

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