mt18hts25672pky Micron Semiconductor Products, mt18hts25672pky Datasheet - Page 9

• Manufacturer Part Number: mt18hts25672pky
• Description: Ddr2 Sdram Mini-rdimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 7: Absolute Maximum DC Ratings
PDF: 09005aef82218d23
hts18c256_512x72pky.pdf - Rev. C 3/10 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
I
A
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating tempera-
ture
DD
REF
REF
/V
2
input 0V ≤ V
leakage current; V
DDQ
Notes:
supply voltage relative to V
Stresses greater than those listed may cause permanent damage to the DRAM devices
on the module. This is a stress rating only, and functional operation of the module at
these or any other conditions outside those indicated on each device’s data sheet is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
1. The refresh rate is required to double when 85°C < T
2. For further information, refer to technical note TN-00-08: “Thermal Applications,” avail-
IN
≤ 0.95V (All other pins not under
able on Micron’s Web site.
REF
= valid V
OUT
SS
REF
≤ V
SS
level
DDQ
IN
2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
; DQs and
≤ V
DD
9
;
Address inputs: RAS#,
CAS#, WE# S#, CKE,
BA, ODT
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
Electrical Specifications
≤ 95°C.
–250
© 2006 Micron Technology, Inc. All rights reserved.
Min
–0.5
–0.5
–10
–10
–36
–40
–40
–5
0
0
Max
250
2.3
2.3
10
10
36
70
85
85
95
5
Units
µA
µA
µA
°C
°C
°C
°C
V
V