mt18htf25672fdy-80e Micron Semiconductor Products, mt18htf25672fdy-80e Datasheet

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mt18htf25672fdy-80e

Manufacturer Part Number
mt18htf25672fdy-80e
Description
1gb, 2gb X72, Dr 240-pin Ddr2 Sdram Fbdimm Dr, Fb, X72
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM FBDIMM
MT18HTF12872FD – 1GB
MT18HTF25672FD – 2GB
For the latest component data sheet, refer to Micron’s Web site:
Features
• 240-pin, DDR2 fully buffered dual in-line memory
• Fast data transfer rates: PC2-4200, PC2-5300, or
• 1GB (128 Meg x 72), 2GB (256 Meg x 72)
• 3.2 Gb/s, 4 Gb/s, and 4.8 Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link
• Fault tolerant; can work around a bad bit lane in
• High-density scaling with up to eight FBDIMMs per
• SMBus interface to AMB for configuration register
• In-band and out-of-band command access
• Deterministic protocol
• Automatic DDR2 SDRAM bus and channel calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DRAM test support
• V
• V
• V
• V
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
• Supports 95°C operation with 2X refresh
Table 1:
PDF: 09005aef81a2f237/Source: 09005aef81a2f25b
HTF18C128_256x72FD.fm - Rev. C 9/07 EN
module (FBDIMM)
PC2-6400
between the host controller and advanced memory
buffer (AMB)
each direction
channel
access
– Enables memory controller to optimize DRAM
– Delivers precise control and repeatable memory
Speed
Grade
REF
-80E
-667
-53E
DD
CC
DDSPD
accesses for maximum performance
behavior
= 1.5V for AMB
= V
= 0.9V SDRAM command/address termination
DD
= +3.0V to +3.6V for AMB and EEPROM
Q = +1.8V for DRAM
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-5300
PC2-4200
1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM (DR, FB, x72)
CL = 5
800
667
Data Rate (MT/s)
CL = 4
533
533
533
1
Figure 1:
Notes: 1. Not recommended for new designs.
www.micron.com
PCB height: 30.35mm (1.19in)
Options
• Package
• Frequency/CAS latency
– 240-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 3
400
400
240-Pin FBDIMM (MO-256 R/C B)
t
(ns)
12.5
RCD
15
15
©2005 Micron Technology, Inc. All rights reserved.
1
12.5
(ns)
t
15
15
RP
Marking
Features
-80E
-667
-53E
Y
(ns)
t
55
55
55
RC

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mt18htf25672fdy-80e Summary of contents

Page 1

... MT18HTF25672FD – 2GB For the latest component data sheet, refer to Micron’s Web site: Features • 240-pin, DDR2 fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 72), 2GB (256 Meg x 72) • ...

Page 2

... Table 4: Part Numbers and Timing Parameters – 2GB Base device: MT47H128M8, Module 2 Part Number Density MT18HTF25672FDY-80E__ 2GB 2GB MT18HTF25672FDY-667__ 2GB MT18HTF25672FDY-53E__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web page. 2. All part numbers end with a four-place code (not shown) that designates component, PCB, and AMB revisions ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin FBDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol PN3 PN3 ...

Page 4

... The M_Test pin provides an external connection for testing the margin of V produced by a voltage divider on the module not intended to be used in normal system operation and must not be connected (DNU system. This test pin may have other features on future card designs and will be included in this specification at that time. ...

Page 5

... Block Diagrams Commodity DDR2 DDR2 SDRAM component devices DDR2 component DDR2 component DDR2 component modules AMB • • • DDR2 component DDR2 component DDR2 component DDR2 component SMBus access to buffer registers Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 6

Figure 3: Functional Block Diagram CS1# CS0# DQS0 DQS0# DM0 DM DQ DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQS1# DM5 DM DQ DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ ...

Page 7

... Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C page 4.1.2.7-1 The MT18HTF12872FD and MT18HTF25672FD DDR2 SDRAM modules are a high- bandwidth, large-capacity channel solution that have a narrow host interface. FBDIMMs use DDR2 SDRAM devices isolated from the channel behind an advanced memory buffer (AMB) on the FBDIMM ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

I Conditions and Specifications DD Table 10: I Conditions DD Symbol Condition I _Idle_0 Idle current, single or last DIMM: L0 state; Idle (0 percent bandwidth); Primary channel DD enabled; Secondary channel disabled; CKE HIGH; Command and address lines stable; ...

Page 10

Table 11: I Specifications – 1GB DDR2-533 DD Symbol I _Idle_0 2,200 CC I 1,420 DD 1 6.2 Total power Table 12: I Specifications – 1GB DDR2-667 DD Symbol I _Idle_0 2,600 ...

Page 11

Serial Presence-Detect Table 17: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition EEPROM and AMB supply voltage Input high voltage: logic 1; all inputs Input low voltage: logic 0; all inputs Output low voltage 3mA OUT Input leakage current: ...

Page 12

... Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module Byte Description 0 CRC range/SPD bytes total/bytes used 1 SPD revision 2 Key byte/DRAM device type 3 Voltage levels of this assembly 4 SDRAM addressing: Device rows/columns/banks 5 Module physical attributes: Height/thickness 6 Module type 7 Module organization: Module ranks/SDRAM device width (I/O) ...

Page 13

... Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module (continued) Byte Description Bits 7:4: ΔT 33 (MAX) (DRAM case temperature difference between C MAX case temperature and baseline MAX case temperature), the baseline MAX case temperature is 85°C; Bits 3:0: DT4R4W Δ (case temperature rise difference between I ...

Page 14

Table 20: Serial Presence-Detect – AMB and CRC Byte Description 80 FBDIMM reserved byte 81 Channel protocol supported (lower byte) 82 Channel protocol supported (upper byte) 83 Back-to-back turnaround clock cycles t 84 Buffer read access at CK for MAX ...

Page 15

Table 20: Serial Presence-Detect – AMB and CRC (continued) Byte Description 114 AMB postinitialization bytes 115 AMB manufacturer’s ID code (lower byte) 116 AMB manufacturer’s ID code (upper byte) 126–127 Cyclical redundancy code (CRC) for bytes 0–116 (1GB/2GB) 150 Informal ...

Page 16

... Back view with heat spreader U14 U15 U12 U12 U12 U13 U17 U17 U17 U20 ® their respective owners. characterization sometimes occur. 16 Module Dimensions 2.0 (0.079) TYP U8 U9 30.5 (1.201) 30.2 (1.189) 17.3 (0.681) TYP 9.5 (0.374) TYP 3.9 (0.153) TYP (x2) Pin 120 45° x 0.18 (0.0071) 1.19 (0.047) Detail A 24.95 (0.982) ...

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