mt18htf25672az Micron Semiconductor Products, mt18htf25672az Datasheet - Page 9

• Manufacturer Part Number: mt18htf25672az
• Description: 2gb, 4gb X72, Dr, Ecc 240-pin Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 9:
PDF: 09005aef83c6d17f/Source: 09005aef83c6d1c0
HTF18C256_512x72AZ.fm - Rev. A 9/09 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
/V
OZ
I
C
I
1
DDQ
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
DDR2 SDRAM device case operating temperature
DD
REF
REF
supply voltage relative to V
input 0V ≤ V
leakage current; V
Notes: 1. The refresh rate is required to double when T
Stresses greater than those listed in Table 9 may cause permanent damage to the DRAM
devices on the module. This is a stress rating only, and functional operation of the device
at these or any other conditions above those indicated in each device’s data sheet is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
2. For further information, refer to technical note TN-00-08: Thermal Applications, available
IN
on Micron’s Web site.
≤ 0.95V; (All other pins not under
REF
= valid V
OUT
SS
SS
2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
≤ V
REF
DDQ
level
IN
≤ V
; DQs and
DD
9
;
2
Command/Address
RAS#, CAS#, WE#, BA
S#, CKE, ODT
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C
exceeds 85°C
Electrical Specifications
©2009 Micron Technology, Inc. All rights reserved.
Min
–0.5
–0.5
–90
–45
–30
–10
–10
–36
0
Max
+2.3
+2.3
+90
+45
+30
+10
+10
+36
+85
Units
µA
µA
µA
°C
V
V