mt18htf25672pdy Micron Semiconductor Products, mt18htf25672pdy Datasheet - Page 18

• Manufacturer Part Number: mt18htf25672pdy
• Description: Ddr2 Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

Table 13: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80e935cd
htf18c64_128_256x72pdy.pdf - Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Notes:
DD
Specifications and Conditions (Die Revision E) – 2GB (Continued)
),
t
RRD =
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
t
in I
RRD (I
DD
DD2P
), AL =
DD
(CKE LOW) mode.
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
18
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
3078
800
2763
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2673
-53E
Specifications
-40E
2403
Units
mA