mtfdbac030mae-1c1es Micron Semiconductor Products, mtfdbac030mae-1c1es Datasheet - Page 17

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mtfdbac030mae-1c1es

Manufacturer Part Number
mtfdbac030mae-1c1es
Description
C200 1.8-inch Nand Flash Ssd
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Characteristics
Table 11: SATA Typical Power Consumption
Table 12: Absolute Maximum Ratings
PDF: 09005aef83687459
realssd_c200_1_8.pdf - Rev. C 9/09 EN
Density
30GB
60GB
120GB
Parameter/Condition
Voltage input
Operating temperature
Non-operating temperature
Rate of temperature change
Relative humidity (noncondensing)
0.096
0.096
0.096
Idle
Notes:
3
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 13: Shock and Vibration
Table 14: Recommended Operating Conditions
Parameter/Condition
Operating shock
Operating vibration
Parameter/Condition
Power supply voltage
Ground supply voltage
1. Data taken at 25°C.
2. IOMETER MAX transfer rate with 128KB transfer size.
3. DIPM enabled.
Sleep
0.096
0.096
0.096
3
Standby
1
0.096
0.096
0.096
Commercial
17
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Erase
Symbol
Symbol
2.2
2.2
2.2
GND
V33
V33
T
A
C200 1.8-Inch NAND Flash SSD
Read
Electrical Characteristics
1.8
1.8
1.8
Min
3.14
Min
–0.5
–55
0
0
5
2
2–500Hz at 3.1G
©2007 Micron Technology, Inc. All rights reserved.
Specification
1500 G/1.0ms
Typ
3.3
0
Max
3.96
+95
+20
70
95
Write
2.4
2.4
2.4
Max
3.46
2
0
°C/hour
Unit
°C
°C
%
V
Unit
Unit
W
W
W
V
V

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