k4s640832n-lc75 Samsung Semiconductor, Inc., k4s640832n-lc75 Datasheet - Page 9

• Manufacturer Part Number: k4s640832n-lc75
• Description: 64mb N-die Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

Notes :
(Recommended operating condition unless otherwise noted, T
11.0 DC CHARACTERISTICS (x8)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S640832N
K4S641632N
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S640832N-LC
4. K4S640832N-LL
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70°C for x8)
IH
9 of 15
IH
IH
/V
CC
CC
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
= ∞
= ∞
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ)
= ∞
= ∞
C
L
Rev. 1.1 December 2007
Version
Synchronous DRAM
400
110
110
75
65
15
10
30
25
2
2
4
4
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4