k4h510438f-llb3 Samsung Semiconductor, Inc., k4h510438f-llb3 Datasheet - Page 14
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k4h510438f-llb3
Manufacturer Part Number
k4h510438f-llb3
Description
512mb F-die Ddr Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H510438F-LLB3.pdf
(24 pages)
Note :
1. V
2. The value of V
K4H510438F
K4H510838F
K4H511638F
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V
The area between the undershoot signal and GND must be less than or equal to
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
IX
is expected to equal 0.5*V
Parameter/Condition
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
DDQ
Maximum Amplitude = 1.5V
0
of the transmitting device and must track variations in the dc level of the same.
DD
AC overshoot/Undershoot Definition
0.5
0.6875
must be less than or equal to
V
DD
Area
1.0
Overshoot
1.5
2.0
2.5
14 of 24
3.0
Symbol
V
V
V
V
IH
IL
ID
IX
Tims(ns)
(AC)
3.5
(AC)
(AC)
(AC)
4.0
4.5
0.5*V
V
5.0
Maximum Amplitude = 1.5V
REF
5.5
Min
0.7
DDQ
undershoot
+ 0.31
GND
6.0
-0.2
6.3125
DDR400
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
6.5
Rev. 1.1 November 2008
0.5*V
7.0
V
V
REF
DDQ
Max
DDQ
- 0.31
+0.6
Specification
+0.2
DDR333
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
DDR SDRAM
Unit
V
V
V
V
DDR266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2