k4t51043qc-zle7 Samsung Semiconductor, Inc., k4t51043qc-zle7 Datasheet - Page 19

• Manufacturer Part Number: k4t51043qc-zle7
• Description: 512mb C-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Input/Output capacitance
Electrical Characteristics & AC Timing for DDR2-800/667/533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS CDIO
Refresh to active/Refresh command time
Average periodic refresh interval
512Mb C-die DDR2 SDRAM
Bin
(CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
(0 qC < T
Speed
tRCD
tRAS
tRC
tRP
Parameter
OPER
Parameter
< 95 qC; V
3.75
12.5
12.5
51.5
min
2.5
39
DDR2-800(E7)
5
5 - 5 - 5
DDQ
= 1.8V + 0.1V; V
70000
max
8
8
8
-
-
-
tRFC
tREFI
CCK
CDCK
CI
CDI
CIO
Symbol
3.75
min
15
15
54
39
85qC T
5
3
DDR2-667(E6)
DD
0qCdT
Symbol
5 - 5 - 5
= 1.8V + 0.1V)
Page 19 of 29
Min
1.0
1.0
2.5
x
x
x
CASE
CASE
DDR2-400
DDR2-533
70000
max
8
8
8
d 85qC
-
-
-
d 95qC
Max
0.25
0.25
2.0
2.0
4.0
0.5
3.75
3.75
min
256Mb
15
15
55
40
DDR2-533(D5)
5
7.8
3.9
75
4 - 4 - 4
Min
1.0
1.0
2.5
x
x
x
DDR2-667
512Mb
105
7.8
3.9
70000
max
8
8
8
-
-
-
Max
0.25
0.25
2.0
2.0
3.5
0.5
127.5
1Gb
7.8
3.9
min
15
15
55
40
DDR2-400(CC)
5
5
-
Min
1.0
1.0
2.5
3 - 3 - 3
DDR2 SDRAM
x
x
x
2Gb
195
Rev. 1.4 Aug. 2005
7.8
3.9
DDR2-800
70000
max
8
8
-
-
-
-
327.5
Max
0.25
1.75
0.25
4Gb
2.0
3.5
0.5
7.8
3.9
Units
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
Ps
Ps
pF
pF
pF
pF
pF
pF